An example process to remove spacers from the gate of a NMOS transistor. Additionally, a sidestream of the second column is passed into the third column and the purified tetrahydrofuran is recovered as the top product of the third column. Each of two base side walls is provided with a first engagement projection on its inner surface, and a distance L1 between the respective leading ends of the first engagement projections is smaller than the distance L2 between the respective leading ends of the first protrusions, and the distance L1 is equal to or larger than a distance L3 between the two socket side walls. The buffer location is unavailable for storage of other image data until the image processing is complete. After authentication, the user of the client computer selects a subset of the copied hyperlink addresses from the host computer. and at a shear rate of 50 s\u22121 of below 1.