The invention relates to a semiconductor component with a WSiN layer as thin-film resistor with high temperature coefficient for use as thermistor in bolometers. The valve seat structure includes a flat seat surface portion which extends around the outlet end of the passing pipe. First and second electrode layers are disposed facing each other across the fifth dielectric layer so as to constitute a capacitor. The time intervals between the adjacent rise and fall times are obtained during a predetermined period. The methods of the present invention economically and efficiently increase the utilization rate of gaseous hydrogen stored in a cascade storage system by managing the storage of gaseous hydrogen and increasing the utilization rate of gaseous hydrogen stored in a cascade storage system.