The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. In a preferred aspect, each position device is integrally formed with the substrate, or can be formed on the substrate by stamp forming technique, that each is used to confine the corresponding press key to move following only the specific direction, such that the wobbling of the press keys is prevented. The inductors on each planar level are formed by interwinding one of the inductors within the other inductor, and then stacking these in a preferred manner.