A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode. The first member has a first insert tube extending from a distal end thereof and a handle disposed at a proximal end thereof. As a result, system boot can be performed without employing a NOR type flash memory. The plurality of elongated conducting regions are positioned parallel with each other and at a predetermined spaced distance apart from each other.