Embodiments provide a switching device including one or more field-effect transistors and bias circuitry. In some embodiments, each block of the NVM can include a block table-of-contents, which can be encoded and dynamically-sized. Device isolation layer patterns are formed on the semiconductor substrate including the trench mask pattern and substrate trenches. Each of the heat transfer mediums includes a base attached to the heat dissipating plate, and at least one resilient sheet extending from an end of the base.