Disclosed is a memory circuit and method of forming the same. Preferably, the organometallic polymer has Si in the place of M and is obtained via hydrolysis and polycondensation of trialkoxysilane having a photo- or thermally-polymerizable group and dialkoxysilane having a phenyl group. The container system of the present invention is configured to comprise at least two receptacles for storing the products, and substantially abutting each other and at least one applicator configured to pick up the products stored in the receptacles simultaneously.