A Mo source powder is added to and mixed with an iron-based powder containing 1. The metal wiring is fabricated by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times to form a metal wiring layer having an aluminum top layer. The memory cell 100 includes a memory element 108, the resistance value of which is changed and holds data by utilizing the resistance value of the memory element 108. If this indicates a fall, a countdown state is initiated in order to reduce the risk of false alarms, before sending an alarm. The magnetic properties of the structure are switched by applying a dc electrical potential between the conducting tracks. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide.