A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. Items are deposited through unsecured portal, pass past baffle and are stored in secure compartment. The carrier is slidably mounted in the housing. The side wall partially extends around the top, bottom and intermediate panels to partially enclose the collapsible bag and define a plurality of bays. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.