A semiconductor integrated circuit device has a boosted-voltage power-supply circuit generating a boosted voltage, an internal circuit being driven with the boosted voltage, and a control circuit controlling the internal circuit by receiving the boosted voltage. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. In one method, selection for a particular region of a particular page is received at a terminal and a determination is made whether the selected region is currently received. The bench comprises two cushions 28 fixedly attached to individual frame structures 30 each hingedly 32 connected at the center. A control transistor is connected to the detection circuit and the input transistor to turn off the input transistor in response to the control signal.