In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. All the light beams from the light source devices are incident on the optical deflector in directions oblique to a normal line of the scanning surfaces in a main-scanning cross section and to a normal line of a deflecting reflection plane of the optical deflector in a sub-scanning cross section. A recess which reaches the first GaN layer but does not pierce the first GaN layer is formed in a surface layer of the AlGaN layer. The control circuit outputs a backlight-off signal when receiving the second control signal, and outputs a backlight-on signal after outputting the backlight-off signal. The device wafer with handle wafer is diced, and good chips with attached portions of the diced handle wafer are positioned and bonded to the good chip sites of the other device wafer, and the handle wafer portions are removed. Thus, a reduction in the operational speed of a semiconductor device having transistors can be prevented.