A method of etching silicon-containing material is described and includes a SiConi\u2122 etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. A fork point determination section extracts all fork points in a sequential processing program, and removes fork points with a static boost value satisfying a static rounding condition. The absorbent composite has a selectively stretchable substrate layer and a plurality of pockets in or on the substrate layer. The LED light module assembly has the capacity to dissipate between about 10-14 W of power without exceeding a maximum LED junction temperature of about 125\xb0 C.