A lighting module comprises a bezel, a lamp and a fixing component. The heater may be positioned over a portion of the window or may form at least a portion of the window. The epitaxial field effect transistor layer structure includes critical device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance. The invention is also directed to a method for manufacturing a medical device. The ratio relationships of the optical taps together provide a predetermined communication reliability metric for signals traversing the optical interconnect system between computer system components. Each of the page buffers includes a latch unit for storing data to be programmed into memory cells included in the cell string or for storing data read from the memory cells.