A variable length encoding unit includes a run-length converter, a table memory, and a variable length encoder. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The computing device executes the one or more test routines on at least the first portion of the second version of the target program without executing the one or more test routines on the second portion of the second version of the target program. The opaque magnetic particles in the ferrofluid form an optical ferrofluid mask over the photoresist around the write gap. A locating device associated with the selected recording medium is activated to identify the location of the selected recording medium in the storage subsystem.