Methods of fabricating charge storage transistors are described, along with apparatus and systems that include them. The BISR may further include a redundancy register on which final redundancy information is loaded at each power-on of the device and control logic for managing data transfer from external circuitry to the built-in self-test and self-repair structure and vice versa. The coupling out area has a Fresnel structure which receives light from the coupling-in-area via a folded beam path and couples the image out of the multifunction optical element. A corresponding coefficient for each of the plurality of filtering modes may be generated based on the determined similarity levels. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process. This information data is held as encryption and encoding information data.