A memory cell and method for making a memory cell in accordance with embodiments of the present invention includes two or more tunnel diodes, a loading system, and a driving system. The convertible roof system is mounted to the bulkhead or wall member including left and right linkage assemblies, an electronic control unit, and a hydraulic control system. A second integrated circuit may be manufactured on the remainder of the wafer and the process repeated to manufacture additional integrated circuits from a single wafer.