A cost-effective and simple method of fabricating strained semiconductor-on-insulator structures which avoids epitaxial growth and subsequent wafer bonding processing steps is provided. Within the vertically oriented fuse, the current flow is substantially vertical, i. 8 milliequivalentg or more, to a catalyst comprising the cation-exchange resin, and to a process for producing bisphenol A using a cation-exchange resin catalyst. A modular, vendor-independent, centralized, rules-based engine may perform processing to deliver tailored customer experiences, relying on values for prioritized experiences identified through use of the computer aid. At least one agent is configured to replace the intermediate component in the implant support cavity in the second configuration.