Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The solid block detergents of the invention used a mixed inorganic and organic sequestrant composition that successfully softens service water used in manufacturing aqueous detergents from the composition, but also obtains substantially improved organic soil removal on dishware or flatware. One of the layers of material deposited on the semiconductor wafer to form integrated circuit devices on the wafer may be used as the etch blocking layer.