A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. The ending goal of will then assume the first definition of the slot or method, as needed. Each module requires demanding processing time and resources by nature, but the FET system integrates these modules in such a way that real time processing is possible.