A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. Various administrator notificationapproval options may be provided. From said determined driver demanded torque, the time rate of change ddt in such determined driver demanded torque is determined. A vignette metric is determined based on the flattened image. The supporting portions are configured for supporting optical modules. The method incorporates a value generator that outputs the default values repeatedly within each first cycle time, calculation and control means that detect the default values in a cyclic manner and a pulse switching interface that has one or more outputs for the pulses.