A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. , at low cost, with high reliability, and with high precision. The method further includes determining a range of variation in the core memory cells to be measured that is due to process variation in the generation of the core memory cells. The second ion trap, arranged downstream of the first ion trap, is arranged to have a lower low mass cut-off than the first ion trap, and hence ions which are not trapped in the first ion trap are trapped in the second ion trap. The plural shear panels and plural seismic energy dampers distribute seismic energy absorption and dissipation throughout the building structure to avoid stress concentrations, and to dissipate significant seismic energy, thus limiting the amplitude of deflections of the building structure during a seismic event.