1459845035-085fe3ad-8aee-4119-a9a2-1ecd6936e844

A translating memory module is disclosed including a printed circuit board, at least one memory integrated circuit coupled to the printed board, and at least one support chip coupled to the printed circuit board and coupled between the edge connector and the at least one memory integrated circuit. The process comprises exposing beta calcium sulfate hemihydrate to steam at a pressure above atmospheric pressure. The number of failures in each IC die, along with their associated points in time, may be used to create burn-in reliability curves which are conventionally derived using other processes that may be less cost effective or not possible to effect with unpackaged IC dice. A given conditional expression is satisfied. The self-aligned split-gate flash cell structure is configured into two contactless array architectures: a contactless NOR-type flash memory array and a contactless parallel common-sourcedrain conductive bit-lines flash memory array.