Provided is a DAD that improves resistance to latch-up and stabilizes breakdown voltage characteristic. The single joint elevator including a housing having an access opening configured to receive the tubular. The sections are movable about a first axis of rotation and a second axis of rotation. The ITO film is patterned by dry etching due to reactive ion etching using a mixed gas of a hydrogen halide gas and an inert gas, with the temperatures of the center portion and peripheral portion of the substrate substantially equalized to each other.