The present invention provides a method for manufacturing a thin film transistor with small leakage current and high switching characteristics. 0 kV, magnetic carrier particles having area proportion S1 found from a specific expression of from 0. The two articles are transported, with a gap between them, to a direction reversal device. As a result, when rows of the matrix are driven successively row by row, the intensity of the outputted electron beams can made accurate for any driving pattern. The system includes a subscription gateway configured for near real time transfer of the transcribed data over the communication network to the one or more mobile devices.