The present invention relates to a test blade for a blade-release test. Since niobium pentoxide has a low crystallization temperature of 600\xb0 C. A p-type impurity region is formed under the gate electrode of the transfer transistor and within the semiconductor substrate, and the process can proceed without being limited by the self-alignment. The masks created by the algorithm are used to print subsequent patterns. A passage extends through the spigot and the support block to the sensor on the substrate.