The present invention discloses a nonvolatile memory with undercut trapping structure, the nonvolatile memory comprising a semiconductor substrate. An anterior side of each support block may have an illuminable transparent number. In addition, through holes are formed in respective portions of a base insulating layer below the connection portions. The synchronization process may be automatically initiated any time the contact records in the internal memory and the smart card differ. Centrifugal force of the control valve developed when the rotary shaft is rotated at a predetermined speed or higher causes the control valve to move in a direction in which the second communication passage is opened, thereby to allow the upstream space and the downstream space to communicate with each other.