An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching. In the above-mentioned connector, each of the contact terminals is formed to extend to the top surface and the bottom surface of the housing. The present invention involves placement of agitation vanes on a displaceable inner seal within the cartridge such that such vanes will break apart clumps and bridges of the marking material during installation of the container upon the marking engine.