Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The method comprises selecting a starting data block that is either a random data block or an output data block from known detectors. A metering chamber is disposed between the two occluders 152, 162. The low-power extension carrier may be activated as needed to offload data transfers from the primary cell, in download-only, upload-only, and time-division LTE modes. Advantageously, the plunger element functions to effectively seal the internal vent passageway from the primer chamber and fuel bowl regardless of the direction from which the primer bulb is depressed.