The safe-operating area in a heterojunction bipolar transistor is improved by providing a collector region in the transistor having a graded doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. In a first data network based on a first technology, the data network comprises one or more network devices andor interfaces to establish communication with at least one station of the first technology, and with base functions for an autonomous operation of the first network. Memory modules comprising a number of volatile memory devices may be fabricated. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available. To protect the silver-doped detection electrode, a protective layer is formed on the surface of the detection electrode. The pivotal levers are released after activation of the nozzles to permit appropriate movement for picking up, inspecting, orientating and locating electronic components on a substrate with the nozzles.