Methods for processing a substrate with a boron rich film are provided. The object having a silicon face is positioned so as to be spaced apart from a plasma-generating member by a predetermined interval distance. The contact extends through an aperture of the mesh of the gate electrode layer. The method steps are performed in parallel for all nodes on a graphics processing unit. Each topic vector has a topic vector direction representing a topic in the document set. The patching system further includes a plurality of jack access cards adapted to be mounted in the card housing, and a rear interface module positioned at the rear end of the card housing.