A method and structure alters an integrated circuit design having silicon over insulator transistors. At least one microchannel is formed in an external surface of the component; and one or more coolant passage holes are then formed, extending from at least one of the microchannels to an interior region of the component. Preferably, the films and packages further include an outer protective layer laminated to the outer skin layer. After leak testing is completed, a sealing cap is secured over the bushing, and the device is left permanently in place after the test is completed. The memory element arrangement has multiple nonvolatile memory elements which are arranged in matrix form and can be addressed via bit lines arranged in column form and word lines arranged in row form. In one embodiment, the hierarchical view permits user input to initialize attribute values for simple and complex arguments.