A method of forming a FINFET CMOS device structure featuring an N channel device and a P channel device formed in the same SOI layer, has been developed. The sensor includes a base with helically threaded post and a float slidably mounted on the post. An inverse FFT circuit can place the segments of signals back within the time domain. A first gate dielectric layer and a first gate can be formed across the first fin. The third lamp carriage assembly is slidably and pivotally coupled at its ends to the first and second plates for directing light output by the third lamp in a third direction that crosses the first and second directions. A portion of a back surface of the semiconductor wafer is removed.