An integrated circuit having high performance CMOS devices with good short channel effects may be made by forming a gate structure over a substrate; forming pocket implant regions and sourcedrain extensions in the substrate; forming spacers along sides of the gate structure; and thermal annealing the substrate when forming the spacers, the thermal annealing performed at an ultra-low temperature. The invention can assume many different embodiments. In addition, there are provided photolithographic processes comprising directing exposure onto a resist through a mask formed using such methods. The steam is directed into one or more regions used for steam reforming, so as to produce hydrogen for use in a fuel cell.