A method of depositing boron carbide on an aluminum substrate, particularly useful for a plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B4C. The method includes providing at least one producer well in fluid communication with a producing facility and with a hydrocarbon containing hydrate reservoir. The first wave generator is a rotational input component, the second wave generator is a reduced-speed rotational output component, and the first and second circular splines are kept from rotating. The first antenna may be formed using a hybrid planar-inverted-F and slot arrangement in which a planar resonating element is located above a rectangular slot in the planar ground element. With this, an exposed part of the conductive layer is formed selectively, and this exposed part of the conductive layer is removed by the etching. The hands-free apparatus is connected to a mobile communication terminal and includes an address-book data storage unit that associates communication-partner information of the mobile communication terminal with name information and stores the associated information in a personal information database as first personal information.