A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first semiconductor material as the topmost layer. The panel comprises a plate for dispersing light and at least one light-emitting diode coupled to the plate for providing the dispersed light. The addresses are formed of individual bit values, and these values have a relative mapping between them. The gate frame defines first connecting areas for enabling connection to a lift link mechanism for vertically moving the gate frame relative to the body frame, and second connecting areas for enabling direct connection to the bracket unit. The invention also relates to a method for controlling the deflection of the electron beam in a vapor deposition system. 0 when measured at a strain rate of 3.