Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a first surface. Other embodiments are described and claimed. In an aluminum-silicon carbide semiconductor substrate whose first component is a metal chiefly composed of aluminum and whose second component is silicon carbide, the second component is compositionally 5 to 60% by weight of the whole and the remainder is the first component, and a warp in the direction of its main surface is 3 \u03bcmmm or less.