A semiconductor memory device includes a memory cell connected to a word line and a bit line, for storing and holding data, a word line driver circuit connected to the word line, a bit line precharge circuit connected to the bit line, and a peripheral control circuit. One surface of the high-temperature member is exposed to high-temperature steam, and the other surface is cooled by cooling steam having a temperature lower than the high-temperature steam. A voltage is applied to the first electrode and the second electrode to establish a difference between the first electrode and the second electrode to be alternately a sixth voltage and a negative voltage of the sixth voltage, and therefore the cell is discharged. A lower panel punch forms the center panel, panel wall and countersink of the shell during upstroke of the press. In some embodiments the LEDs, having a conformal layer of phosphor material, are attached directly to the first surface of a liquid cooled plate. The long side is perpendicular to the rolling direction of the metal plate.