1459893993-3682b428-1769-4100-95f3-e1f613a59ad7

A method for fabricating a dual gate thin film transistor device provides for forming a pair of sourcedrain layers self-aligned with respect to a first gate electrode and forming a second gate electrode self-aligned with respect to both the pair of sourcedrain layers and the first gate electrode. Third and fourth drivers may also be included. The antenna system further comprises two or more antennas configurable for MIMO-diversity reception for the second set of configurations. In this case, the subchannels used by the power line communication system having the high priority are limited to a plurality of consecutive subchannels from an upper side or a lower side of the frequency band. Depending on the result of the evaluation, the travel operation of the motor vehicle is influenced that is otherwise controlled by the digital control system. The shutter may increase f-number of radiation passing therethrough, and may be used in a limited f-cone radiation source with shuttering abilities, for example reducing f-cone of radiation output from the radiation source.