The programming disturb effects in a semiconductor non-volatile memory device can be mitigated by biasing unselected memory cells with a negative voltage while a well containing the memory cells receives a positive voltage. The organic electroluminescent device also including a light-emitting functional layer between the second electrode and one of the first electrodes and a buffering layer that covers the second electrode. A plurality of rows of stacked gate structures crossing over the isolation structures are formed on the substrate. The controller is configured to determine a time duration between a change in the status of the signal in an adjacent block region. Kernel partition, system partition and reserve section updates may be updated with entire files or binary difference files, with failure handling mechanisms are provided for each type of update.