The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. In a semiconductor device having a multilayer wiring structure, dummy pattern is formed in relatively narrow wiring void so as to extend in a direction different from that of dummy patterns formed in relatively wide wiring void. The clear text, first tag data and data from a machine readable data field collectively make up a document message. Additionally, damage to one of the panels still allows the gripping member to be used because the cushion can be reversed to expose the non-damaged panel.