The high-side transistor driver according to the present invention includes a high-side transistor, a low-side transistor, a drive-buffer and an onoff transistor. Execution information is also received from a second development tool. The ion-conducting group includes a sulfonic acid group, a phosphonic acid group or the like. The reception patterns are created by summing the first and second linearly-polarized signals via phase shifting. The high density memory cell benefits from the simple standard processes common to logic processes, and in one embodiment requiring only one additional masking step.