An approach to creating a semiconductor structure for a dielectric layer over a void area includes determining a location of a void area of the topographical semiconductor feature. When voltage is applied to electrodes 2a and 2b formed on an inner circumferential surface and an outer circumferential surface of a piezoelectric ceramic 1 wound like a coil, deformation occurs in such a direction that an inner circumferential side of the piezoelectric ceramic 1 wound like the coil is contracted, and an outer circumferential side is expanded. Thereby, the processes from the scanning of the document to the process executed for the scanned image can be automatically executed by selecting the associated icons, and the user operations are simplified and made easier. A third semiconductor die is disposed over the second semiconductor die. Any solids are collected at the bottom of the vacuum chamber as semi-dry or dry solids. The measurement part measures the cumulative period of time of at least one of high-level and low-level states of the input binary signal for a predetermined period of time after the polarity of the input binary signal is inverted.