An integrated electronic-optoelectronic module comprising: an ultrathin silicon-on-sapphire composite substrate; at least one electronic device fabricated in the ultrathin silicon; and at least one optoelectronic device bonded to the ultrathin silicon-on-sapphire composite substrate and in electrical communication with the at least one electronic device fabricated in the ultrathin silicon layer. Also disclosed is a flow through device including solid porous media therein and attached active components. The position parameters are transferred to a measurement plane on a reference seat. A top surface of the lower semiconductor chip at an end of the lower semiconductor chip is exposed.