A system for using computer input devices with software applications is disclosed. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300\xb0 C. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. Both the AC component and a DC component of the power voltage are applied to each of the power voltage terminals except the DC component second power voltage terminal, and the ground voltage is applied to each of the ground voltage terminals. The disclosed DC holding circuitry may also be implemented with a fast transient network having a single stage of fast transient filtering placed in the input network. Because the CMP stop layer is very dense and hard, it can be made very thin.