A technology of preventing the threshold voltage of the transistor of a cell region from increasing and the refresh characteristic of the transistor of the cell region from deteriorating, while maintaining the characteristic of the transistor of core circuitperipheral circuit regions of a semiconductor memory device, is provided. The cross-linking moiety includes a unit A which has a bond functioning as a rotation axis, and also has first and second groups located at different ends of the bond, a first unit B which is disposed at a first bonding site of the first group, a second unit B which is disposed at a first bonding site of the second group, a first unit C, and a second unit C. The method and apparatus of the present invention does not inhibit compatibility between the vendor device and another device operating in accordance with a standard communication protocol.