1459906863-04e86411-814e-40ff-8910-78c5dfdadefa

The present disclosure relates to a low temperature poly-silicon thin film transistor which possesses electrical characteristics and reliability, and a method of manufacturing the thin film transistor. To suppress interferences in the control system, an observer value is formed that is associated with the position value from the pulse duty factor of the pulse-width modulation. The system further includes a handling tool having a support shaft, a first locking tip adapted to form a first lock with the first locking structure, and a second locking tip adapted to form a second lock with the second locking structure. Further, a multiplexing section produces a multiplexed encoded bit stream by multiplexing the above-mentioned encoded bit stream and encoded information.