A fully depleted field effect transistor formed in a silicon on insulator substrate includes a body region formed in a silicon device layer over an isolation layer of the SOI substrate. A method for forming a tubular printing blanket includes placing a radiation-curable polymer over a base so as to form a layer of a printing blanket, and curing the radiation-curable polymer using a radiation source. The lower electrode includes a first electrode layer and a second electrode layer, which have crystallographic characteristics, particularly, grain sizes or surface roughnesses Ra, different from each other, respectively. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer. The U-shaped end comprises two branches provided with a blind cylindrical bore designed to receive the cylindrical part of the nails. The drape includes an adhesive backing for fixing the drape relative to the patient.