A new method of fabricating and programming and erasing a Flash EEPROM memory cell is achieved. A layout is received that specifies a set of rectangular components, where each rectangular component has at least one size. The mixing stage is operably coupled to mix amplified inbound RF signals with a 1st local oscillation to produce a 1st intermediate frequency signal. An incoming missile strikes the curtain which is adapted such that at least a portion of the curtain separates from the barrier and envelopes or entangles the incoming missile. The low power base station restricts the frequency band allocated to a femtocell terminal under the low power base station on the basis of the propagation loss indicated in the acquired propagation loss information.