A proximity projection-type projector includes a housing; a dust-proof cover arranged on a top portion of the housing; and a projection unit arranged within the housing. Further, a semiconductor device includes a carrier including a first layer and a second layer, a plurality of solder bumps disposed on the second layer, a molding disposed over the second layer and surrounding the plurality of solder bumps, the molding includes a protruded portion protruding from a sidewall of the first layer adjacent to an end portion of the first layer. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential is applied, is included.