Provided is a film formation mask capable of preventing slit-like openings from being closed by vibrations so as to form a highly precise patterned film with stability. In one aspect of the invention, the system switches based at least in part on arbitrated loop primitives. A drain voltage is coupled to the bit line and supplies a voltage greater than a ground voltage, while a gate voltage is coupled to a gate terminal of the target cell and supplies a voltage greater the ground voltage.