Methods are provided for fabricating a ferroelectric capacitor structure including methods for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. Optimal rank selection can be performed using a maximum rank selection protocol, a channel capacity-based protocol, or any other suitable protocol that facilitates rank selection, and CQI information can be generated based in part on effective SNRs determined with regard to a selected optimal rank. The line lead generally is a high strength cable andor the line protection system generally does not include a shunt bypass assembly.